Ferroelectric Random Access Memories

Ferroelectric Random Access Memories

Fundamentals and Applications

Ishiwara, Hiroshi; Okuyama, Masanori; Arimoto, Yoshihiro

Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

04/2004

291

Dura

Inglês

9783540407188

15 a 20 dias

1350

Descrição não disponível.
Part I Ferroelectric Thin Films: Overview.- Novel Si-substituted Ferroelectric Films.- Static and Dynamic Properties of Domains.- Nanoscale Phenomena in Ferroelectric Thin Films.- Part II Deposition and Characterization Methods: Sputtering Techniques.- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films.- Recent Development of Ferroelectric Thin Films by MOCVD.- Materials Integration Strategies.- Characterization by Scanning Nonlinear Dielectric Microscopy.- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs.- Operation Principle and Circuit Design Issues.- High Density Integration.- Testing and Reliability.- Part IV Advanced-Type Memories: Chain FeRAMs.- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM.- FET-type FeRAMs.- Part V Applications and Future Prospects: Application to Future Information Technology World.- Subject Index.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
Ferroelectric RAM;Metals and Alloys;Random Access Memory;Semiconductors;alloy;circuit design;High Density;liquid;material;metals;microscopy;nano-scale;reliability;semiconductor;testing;thin films