MOS System
-10%
portes grátis
MOS System
Engstroem, Olof
Cambridge University Press
09/2014
364
Dura
Inglês
9781107005938
15 a 20 dias
870
Descrição não disponível.
1. Introduction; 2. Basic properties of the MOS system; 3. Basic properties of the gate stack; 4. Electron states at MOS interfaces; 5. Carrier capture at bulk oxide traps; 6. Electrical characterization by Fermi-probe technique; 7. Electrical characterization by thermal action; 8. Characterization of oxide/silicon energy band alignment: internal photoemission and x-ray photoelectron spectroscopy; 9. Electron spin resonance; 10. MOS systems with silicon dioxide dielectrics; 11. MOS systems with high-k dielectrics; 12. Gate metals and effective work function; 13. Transmission probabilities and current leakage in gate oxides; 14. MOS systems on high-mobility channel materials.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
1. Introduction; 2. Basic properties of the MOS system; 3. Basic properties of the gate stack; 4. Electron states at MOS interfaces; 5. Carrier capture at bulk oxide traps; 6. Electrical characterization by Fermi-probe technique; 7. Electrical characterization by thermal action; 8. Characterization of oxide/silicon energy band alignment: internal photoemission and x-ray photoelectron spectroscopy; 9. Electron spin resonance; 10. MOS systems with silicon dioxide dielectrics; 11. MOS systems with high-k dielectrics; 12. Gate metals and effective work function; 13. Transmission probabilities and current leakage in gate oxides; 14. MOS systems on high-mobility channel materials.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
